IRF40DM229

производитель :

Infineon Technologies

категория продукта :

Транзисторы - полевые транзисторы, МОП-транзисторы - одиночные

Current - Continuous Drain (Id) @ 25°C :

159A (Tc)

Drain to Source Voltage (Vdss) :

40V

Drive Voltage (Max Rds On, Min Rds On) :

6V, 10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

161nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

5317pF @ 25V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

DirectFET™ Isometric MF

Packaging :

Cut Tape (CT)

Part Status :

Active

Power Dissipation (Max) :

83W (Tc)

Rds On (Max) @ Id, Vgs :

1.85 mOhm @ 97A, 10V

Series :

StrongIRFET™

Supplier Device Package :

DirectFET™ Isometric MF

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

3.9V @ 100µA