IRFH5110TRPBF

производитель :

Infineon Technologies

категория продукта :

Транзисторы - полевые транзисторы, МОП-транзисторы - одиночные

Current - Continuous Drain (Id) @ 25°C :

11A (Ta), 63A (Tc)

Drain to Source Voltage (Vdss) :

100V

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

72nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

3152pF @ 25V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

8-PowerVDFN

Packaging :

Tape & Reel (TR)

Part Status :

Active

Power Dissipation (Max) :

3.6W (Ta), 114W (Tc)

Rds On (Max) @ Id, Vgs :

12.4 mOhm @ 37A, 10V

Series :

HEXFET®

Supplier Device Package :

PQFN (5x6)

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

4V @ 100µA