IRFTS8342TRPBF

производитель :

Infineon Technologies

категория продукта :

Транзисторы - полевые транзисторы, МОП-транзисторы - одиночные

Current - Continuous Drain (Id) @ 25°C :

8.2A (Ta)

Drain to Source Voltage (Vdss) :

30V

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

4.8nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

560pF @ 25V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

SOT-23-6

Packaging :

Tape & Reel (TR)

Part Status :

Active

Power Dissipation (Max) :

2W (Ta)

Rds On (Max) @ Id, Vgs :

19 mOhm @ 8.2A, 10V

Series :

HEXFET®

Supplier Device Package :

6-TSOP

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

2.35V @ 25µA