IRL5602STRRPBF

производитель :

Infineon Technologies

категория продукта :

Транзисторы - полевые транзисторы, МОП-транзисторы - одиночные

Current - Continuous Drain (Id) @ 25°C :

24A (Tc)

Drain to Source Voltage (Vdss) :

20V

Drive Voltage (Max Rds On, Min Rds On) :

2.5V, 4.5V

FET Feature :

-

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

44nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

1460pF @ 15V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 175°C (TJ)

Package / Case :

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Packaging :

Tape & Reel (TR)

Part Status :

Obsolete

Power Dissipation (Max) :

75W (Tc)

Rds On (Max) @ Id, Vgs :

42 mOhm @ 12A, 4.5V

Series :

HEXFET®

Supplier Device Package :

D2PAK

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±8V

Vgs(th) (Max) @ Id :

1V @ 250µA