IRLU2905PBF

производитель :

Infineon Technologies

категория продукта :

Транзисторы - полевые транзисторы, МОП-транзисторы - одиночные

Current - Continuous Drain (Id) @ 25°C :

42A (Tc)

Drain to Source Voltage (Vdss) :

55V

Drive Voltage (Max Rds On, Min Rds On) :

-

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

48nC @ 5V

Input Capacitance (Ciss) (Max) @ Vds :

1700pF @ 25V

Mounting Type :

Through Hole

Operating Temperature :

-

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Packaging :

Tube

Part Status :

Active

Power Dissipation (Max) :

-

Rds On (Max) @ Id, Vgs :

27 mOhm @ 25A, 10V

Series :

HEXFET®

Supplier Device Package :

I-PAK

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

-

Vgs(th) (Max) @ Id :

2V @ 250µA