SMBTA64E6327

производитель :

Infineon Technologies

категория продукта :

Транзисторы - биполярные (BJT) - одиночные

Current - Collector (Ic) (Max) :

500mA

Current - Collector Cutoff (Max) :

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

20000 @ 100mA, 5V

Frequency - Transition :

125MHz

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Package / Case :

TO-236-3, SC-59, SOT-23-3

Packaging :

Cut Tape (CT)

Part Status :

Obsolete

Power - Max :

330mW

Series :

-

Supplier Device Package :

PG-SOT23-3

Transistor Type :

PNP - Darlington

Vce Saturation (Max) @ Ib, Ic :

1.5V @ 100µA, 100mA

Voltage - Collector Emitter Breakdown (Max) :

30V