IXRFSM18N50

производитель :

IXYS-RF

категория продукта :

Транзисторы - полевые транзисторы, МОП-транзисторы - одиночные

Current - Continuous Drain (Id) @ 25°C :

19A (Tc)

Drain to Source Voltage (Vdss) :

500V

Drive Voltage (Max Rds On, Min Rds On) :

20V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

42nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

2250pF @ 400V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

16-BESOP (0.790", 20.11mm Width), 15 Leads, Exposed Pad

Packaging :

Tube

Part Status :

Active

Power Dissipation (Max) :

835W

Rds On (Max) @ Id, Vgs :

340 mOhm @ 9.5A, 20V

Series :

SMPD

Supplier Device Package :

16-SMPD

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

6.5V @ 250µA