IXFN100N10S1

производитель :

IXYS

категория продукта :

Транзисторы - полевые транзисторы, МОП-транзисторы - одиночные

Current - Continuous Drain (Id) @ 25°C :

100A (Tc)

Drain to Source Voltage (Vdss) :

100V

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

180nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

4500pF @ 25V

Mounting Type :

Chassis Mount

Operating Temperature :

-40°C ~ 150°C (TJ)

Package / Case :

SOT-227-4, miniBLOC

Packaging :

Tube

Part Status :

Obsolete

Power Dissipation (Max) :

360W (Tc)

Rds On (Max) @ Id, Vgs :

15 mOhm @ 500mA, 10V

Series :

HiPerFET™

Supplier Device Package :

SOT-227B

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

4V @ 4mA