IXFT10N100

производитель :

IXYS

категория продукта :

Транзисторы - полевые транзисторы, МОП-транзисторы - одиночные

Current - Continuous Drain (Id) @ 25°C :

10A (Tc)

Drain to Source Voltage (Vdss) :

1000V

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

155nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

4000pF @ 25V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

TO-268-3, D³Pak (2 Leads + Tab), TO-268AA

Packaging :

Tube

Part Status :

Active

Power Dissipation (Max) :

300W (Tc)

Rds On (Max) @ Id, Vgs :

1.2 Ohm @ 5A, 10V

Series :

HiPerFET™

Supplier Device Package :

TO-268

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

4.5V @ 4mA