VM0550-2F

производитель :

IXYS

категория продукта :

Транзисторы - полевые транзисторы, МОП-транзисторы - одиночные

Current - Continuous Drain (Id) @ 25°C :

590A (Tc)

Drain to Source Voltage (Vdss) :

100V

Drive Voltage (Max Rds On, Min Rds On) :

-

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

2000nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

50000pF @ 25V

Mounting Type :

Chassis Mount

Operating Temperature :

-

Package / Case :

Module

Packaging :

Bulk

Part Status :

Obsolete

Power Dissipation (Max) :

2200W

Rds On (Max) @ Id, Vgs :

2.1 mOhm @ 500mA, 10V

Series :

HiPerFET™

Supplier Device Package :

Module

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

-

Vgs(th) (Max) @ Id :

-