2N2857UB

производитель :

Microsemi Corporation

категория продукта :

Транзисторы - биполярные (BJT) - RF

Current - Collector (Ic) (Max) :

40mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 3mA, 1V

Frequency - Transition :

-

Gain :

21dB

Mounting Type :

Surface Mount

Noise Figure (dB Typ @ f) :

4.5dB @ 450MHz

Operating Temperature :

-65°C ~ 200°C (TJ)

Package / Case :

3-SMD, No Lead

Packaging :

Bulk

Part Status :

Obsolete

Power - Max :

200mW

Series :

-

Supplier Device Package :

UB

Transistor Type :

NPN

Voltage - Collector Emitter Breakdown (Max) :

15V