2N5581

производитель :

Microsemi Corporation

категория продукта :

Транзисторы - биполярные (BJT) - одиночные

Current - Collector (Ic) (Max) :

800mA

Current - Collector Cutoff (Max) :

10µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

40 @ 150mA, 10V

Frequency - Transition :

-

Mounting Type :

Through Hole

Operating Temperature :

-55°C ~ 200°C (TJ)

Package / Case :

TO-206AB, TO-46-3 Metal Can

Packaging :

Bulk

Part Status :

Active

Power - Max :

500mW

Series :

-

Supplier Device Package :

TO-46 (TO-206AB)

Transistor Type :

NPN

Vce Saturation (Max) @ Ib, Ic :

1V @ 50mA, 500mA

Voltage - Collector Emitter Breakdown (Max) :

50V