2N6849

производитель :

Microsemi Corporation

категория продукта :

Транзисторы - полевые транзисторы, МОП-транзисторы - одиночные

Current - Continuous Drain (Id) @ 25°C :

6.5A (Tc)

Drain to Source Voltage (Vdss) :

100V

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Feature :

-

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

34.8nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

-

Mounting Type :

Through Hole

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

TO-205AF Metal Can

Packaging :

Bulk

Part Status :

Obsolete

Power Dissipation (Max) :

800mW (Ta), 25W (Tc)

Rds On (Max) @ Id, Vgs :

320 mOhm @ 6.5A, 10V

Series :

-

Supplier Device Package :

TO-39

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

4V @ 250µA