APT25GP120BDQ1G

производитель :

Microsemi Corporation

категория продукта :

Транзисторы - IGBT - Single

Current - Collector (Ic) (Max) :

69A

Current - Collector Pulsed (Icm) :

90A

Gate Charge :

110nC

IGBT Type :

PT

Input Type :

Standard

Mounting Type :

Through Hole

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

TO-247-3

Packaging :

Tube

Part Status :

Active

Power - Max :

417W

Reverse Recovery Time (trr) :

-

Series :

POWER MOS 7®

Supplier Device Package :

TO-247 [B]

Switching Energy :

500µJ (on), 440µJ (off)

Td (on/off) @ 25°C :

12ns/70ns

Test Condition :

600V, 25A, 5 Ohm, 15V

Vce(on) (Max) @ Vge, Ic :

3.9V @ 15V, 25A

Voltage - Collector Emitter Breakdown (Max) :

1200V