APT5012JN

производитель :

Microsemi Corporation

категория продукта :

Транзисторы - полевые транзисторы, МОП-транзисторы - одиночные

Current - Continuous Drain (Id) @ 25°C :

43A (Tc)

Drain to Source Voltage (Vdss) :

500V

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

370nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

6500pF @ 25V

Mounting Type :

Chassis Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

SOT-227-4, miniBLOC

Packaging :

Tray

Part Status :

Obsolete

Power Dissipation (Max) :

520W (Tc)

Rds On (Max) @ Id, Vgs :

120 mOhm @ 21.5A, 10V

Series :

POWER MOS IV®

Supplier Device Package :

ISOTOP®

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±30V

Vgs(th) (Max) @ Id :

4V @ 2.5mA