APTM100H18FG

производитель :

Microsemi Corporation

категория продукта :

Транзисторы - полевые транзисторы, МОП-транзисторы - массивы

Current - Continuous Drain (Id) @ 25°C :

43A

Drain to Source Voltage (Vdss) :

1000V (1kV)

FET Feature :

Standard

FET Type :

4 N-Channel (H-Bridge)

Gate Charge (Qg) (Max) @ Vgs :

372nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

10400pF @ 25V

Mounting Type :

Chassis Mount

Operating Temperature :

-40°C ~ 150°C (TJ)

Package / Case :

SP6

Packaging :

Bulk

Part Status :

Active

Power - Max :

780W

Rds On (Max) @ Id, Vgs :

210 mOhm @ 21.5A, 10V

Series :

-

Supplier Device Package :

SP6

Vgs(th) (Max) @ Id :

5V @ 5mA