JANTX2N3019S

производитель :

Microsemi Corporation

категория продукта :

Транзисторы - биполярные (BJT) - одиночные

Current - Collector (Ic) (Max) :

1A

Current - Collector Cutoff (Max) :

10nA

DC Current Gain (hFE) (Min) @ Ic, Vce :

50 @ 500mA, 10V

Frequency - Transition :

-

Mounting Type :

Through Hole

Operating Temperature :

-65°C ~ 200°C (TJ)

Package / Case :

TO-205AD, TO-39-3 Metal Can

Packaging :

Bulk

Part Status :

Active

Power - Max :

800mW

Series :

Military, MIL-PRF-19500/391

Supplier Device Package :

TO-39

Transistor Type :

NPN

Vce Saturation (Max) @ Ib, Ic :

500mV @ 50mA, 500mA

Voltage - Collector Emitter Breakdown (Max) :

80V