MDS800

производитель :

Microsemi Corporation

категория продукта :

Транзисторы - биполярные (BJT) - RF

Current - Collector (Ic) (Max) :

60A

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 1A, 5V

Frequency - Transition :

1.09GHz

Gain :

8.6dB

Mounting Type :

Chassis Mount

Noise Figure (dB Typ @ f) :

-

Operating Temperature :

200°C (TJ)

Package / Case :

55ST-1

Packaging :

Bulk

Part Status :

Active

Power - Max :

1458W

Series :

-

Supplier Device Package :

55ST-1

Transistor Type :

NPN

Voltage - Collector Emitter Breakdown (Max) :

65V