MRF555GT

производитель :

Microsemi Corporation

категория продукта :

Транзисторы - биполярные (BJT) - RF

Current - Collector (Ic) (Max) :

500mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

50 @ 100mA, 5V

Frequency - Transition :

470MHz

Gain :

12.5dB

Mounting Type :

-

Noise Figure (dB Typ @ f) :

-

Operating Temperature :

-

Package / Case :

-

Packaging :

-

Part Status :

Obsolete

Power - Max :

3W

Series :

-

Supplier Device Package :

-

Transistor Type :

NPN

Voltage - Collector Emitter Breakdown (Max) :

16V