MRF5812R1

производитель :

Microsemi Corporation

категория продукта :

Транзисторы - биполярные (BJT) - RF

Current - Collector (Ic) (Max) :

200mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

50 @ 50mA, 5V

Frequency - Transition :

5GHz

Gain :

13dB ~ 15.5dB

Mounting Type :

Surface Mount

Noise Figure (dB Typ @ f) :

2dB ~ 3dB @ 500MHz

Operating Temperature :

-

Package / Case :

8-SOIC (0.154", 3.90mm Width)

Packaging :

Tape & Reel (TR)

Part Status :

Obsolete

Power - Max :

1.25W

Series :

-

Supplier Device Package :

8-SO

Transistor Type :

NPN

Voltage - Collector Emitter Breakdown (Max) :

15V