MS2202

производитель :

Microsemi Corporation

категория продукта :

Транзисторы - биполярные (BJT) - RF

Current - Collector (Ic) (Max) :

250mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 100mA, 5V

Frequency - Transition :

1.025GHz ~ 1.15GHz

Gain :

9dB

Mounting Type :

Chassis Mount

Noise Figure (dB Typ @ f) :

-

Operating Temperature :

200°C (TJ)

Package / Case :

M115

Packaging :

Bulk

Part Status :

Obsolete

Power - Max :

10W

Series :

-

Supplier Device Package :

M115

Transistor Type :

NPN

Voltage - Collector Emitter Breakdown (Max) :

3.5V