MS2212

производитель :

Microsemi Corporation

категория продукта :

Транзисторы - биполярные (BJT) - RF

Current - Collector (Ic) (Max) :

1.8A

DC Current Gain (hFE) (Min) @ Ic, Vce :

15 @ 500mA, 5V

Frequency - Transition :

960MHz ~ 1.215GHz

Gain :

8.1dB ~ 8.9dB

Mounting Type :

Chassis Mount

Noise Figure (dB Typ @ f) :

-

Operating Temperature :

250°C (TJ)

Package / Case :

M222

Packaging :

Bulk

Part Status :

Active

Power - Max :

50W

Series :

-

Supplier Device Package :

M222

Transistor Type :

NPN

Voltage - Collector Emitter Breakdown (Max) :

55V