UTV8100B

производитель :

Microsemi Corporation

категория продукта :

Транзисторы - биполярные (BJT) - RF

Current - Collector (Ic) (Max) :

15A

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 1A, 5V

Frequency - Transition :

470MHz ~ 860MHz

Gain :

8.5dB ~ 9.5dB

Mounting Type :

Chassis Mount

Noise Figure (dB Typ @ f) :

-

Operating Temperature :

200°C (TJ)

Package / Case :

55RT

Packaging :

Bulk

Part Status :

Obsolete

Power - Max :

290W

Series :

-

Supplier Device Package :

55RT

Transistor Type :

NPN

Voltage - Collector Emitter Breakdown (Max) :

60V