BSP51,115

производитель :

Nexperia USA Inc.

категория продукта :

Транзисторы - биполярные (BJT) - одиночные

Current - Collector (Ic) (Max) :

1A

Current - Collector Cutoff (Max) :

50nA

DC Current Gain (hFE) (Min) @ Ic, Vce :

2000 @ 500mA, 10V

Frequency - Transition :

200MHz

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Package / Case :

TO-261-4, TO-261AA

Packaging :

Cut Tape (CT)

Part Status :

Active

Power - Max :

1.25W

Series :

-

Supplier Device Package :

SOT-223

Transistor Type :

NPN - Darlington

Vce Saturation (Max) @ Ib, Ic :

1.3V @ 500µA, 500mA

Voltage - Collector Emitter Breakdown (Max) :

60V