PBSS5130QAZ

производитель :

Nexperia USA Inc.

категория продукта :

Транзисторы - биполярные (BJT) - одиночные

Current - Collector (Ic) (Max) :

1A

Current - Collector Cutoff (Max) :

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

130 @ 1A, 2V

Frequency - Transition :

170MHz

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Package / Case :

3-XDFN Exposed Pad

Packaging :

Cut Tape (CT)

Part Status :

Active

Power - Max :

325mW

Series :

-

Supplier Device Package :

DFN1010D-3

Transistor Type :

PNP

Vce Saturation (Max) @ Ib, Ic :

240mV @ 100mA, 1A

Voltage - Collector Emitter Breakdown (Max) :

30V