PDTA123JT,215

производитель :

Nexperia USA Inc.

категория продукта :

Транзисторы - биполярные (BJT) - одиночные, предварительно предвзятые

Current - Collector (Ic) (Max) :

100mA

Current - Collector Cutoff (Max) :

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 10mA, 5V

Frequency - Transition :

-

Mounting Type :

Surface Mount

Package / Case :

TO-236-3, SC-59, SOT-23-3

Packaging :

Cut Tape (CT)

Part Status :

Active

Power - Max :

250mW

Resistor - Base (R1) :

2.2 kOhms

Resistor - Emitter Base (R2) :

47 kOhms

Series :

-

Supplier Device Package :

TO-236AB (SOT23)

Transistor Type :

PNP - Pre-Biased

Vce Saturation (Max) @ Ib, Ic :

100mV @ 250µA, 5mA

Voltage - Collector Emitter Breakdown (Max) :

50V