PDTD114ETR

производитель :

Nexperia USA Inc.

категория продукта :

Транзисторы - биполярные (BJT) - одиночные, предварительно предвзятые

Current - Collector (Ic) (Max) :

500mA

Current - Collector Cutoff (Max) :

500nA

DC Current Gain (hFE) (Min) @ Ic, Vce :

70 @ 50mA, 5V

Frequency - Transition :

225MHz

Mounting Type :

Surface Mount

Package / Case :

TO-236-3, SC-59, SOT-23-3

Packaging :

Cut Tape (CT)

Part Status :

Active

Power - Max :

320mW

Resistor - Base (R1) :

10 kOhms

Resistor - Emitter Base (R2) :

10 kOhms

Series :

-

Supplier Device Package :

TO-236AB (SOT23)

Transistor Type :

NPN - Pre-Biased

Vce Saturation (Max) @ Ib, Ic :

100mV @ 2.5mA, 50mA

Voltage - Collector Emitter Breakdown (Max) :

50V