PMDPB30XN,115

производитель :

Nexperia USA Inc.

категория продукта :

Транзисторы - полевые транзисторы, МОП-транзисторы - массивы

Current - Continuous Drain (Id) @ 25°C :

4A

Drain to Source Voltage (Vdss) :

20V

FET Feature :

Logic Level Gate

FET Type :

2 N-Channel (Dual)

Gate Charge (Qg) (Max) @ Vgs :

21.7nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

660pF @ 10V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

6-UDFN Exposed Pad

Packaging :

Tape & Reel (TR)

Part Status :

Active

Power - Max :

490mW

Rds On (Max) @ Id, Vgs :

40 mOhm @ 3A, 4.5V

Series :

-

Supplier Device Package :

DFN2020-6

Vgs(th) (Max) @ Id :

900mV @ 250µA