PMDT670UPE,115

производитель :

Nexperia USA Inc.

категория продукта :

Транзисторы - полевые транзисторы, МОП-транзисторы - массивы

Current - Continuous Drain (Id) @ 25°C :

550mA

Drain to Source Voltage (Vdss) :

20V

FET Feature :

Logic Level Gate

FET Type :

2 P-Channel (Dual)

Gate Charge (Qg) (Max) @ Vgs :

1.14nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

87pF @ 10V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

SOT-563, SOT-666

Packaging :

Tape & Reel (TR)

Part Status :

Active

Power - Max :

330mW

Rds On (Max) @ Id, Vgs :

850 mOhm @ 400mA, 4.5V

Series :

Automotive, AEC-Q101, TrenchMOS™

Supplier Device Package :

SOT-666

Vgs(th) (Max) @ Id :

1.3V @ 250µA