PMV130ENEA/DG/B2R

производитель :

Nexperia USA Inc.

категория продукта :

Транзисторы - полевые транзисторы, МОП-транзисторы - одиночные

Current - Continuous Drain (Id) @ 25°C :

2.1A (Ta)

Drain to Source Voltage (Vdss) :

40V

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

3.6nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

170pF @ 20V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

TO-236-3, SC-59, SOT-23-3

Packaging :

-

Part Status :

Obsolete

Power Dissipation (Max) :

5W (Tc)

Rds On (Max) @ Id, Vgs :

120 mOhm @ 1.5A, 10V

Series :

Automotive, AEC-Q101

Supplier Device Package :

TO-236AB

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

2.5V @ 250µA