BC635,112

производитель :

NXP USA Inc.

категория продукта :

Транзисторы - биполярные (BJT) - одиночные

Current - Collector (Ic) (Max) :

1A

Current - Collector Cutoff (Max) :

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

63 @ 150mA, 2V

Frequency - Transition :

180MHz

Mounting Type :

Through Hole

Operating Temperature :

150°C (TJ)

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

Packaging :

Bulk

Part Status :

Obsolete

Power - Max :

830mW

Series :

-

Supplier Device Package :

TO-92-3

Transistor Type :

NPN

Vce Saturation (Max) @ Ib, Ic :

500mV @ 50mA, 500mA

Voltage - Collector Emitter Breakdown (Max) :

45V