BC875,126

производитель :

NXP USA Inc.

категория продукта :

Транзисторы - биполярные (BJT) - одиночные

Current - Collector (Ic) (Max) :

1A

Current - Collector Cutoff (Max) :

50nA

DC Current Gain (hFE) (Min) @ Ic, Vce :

2000 @ 500mA, 10V

Frequency - Transition :

200MHz

Mounting Type :

Through Hole

Operating Temperature :

150°C (TJ)

Package / Case :

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Packaging :

Tape & Box (TB)

Part Status :

Obsolete

Power - Max :

830mW

Series :

-

Supplier Device Package :

TO-92-3

Transistor Type :

NPN - Darlington

Vce Saturation (Max) @ Ib, Ic :

1.8V @ 1mA, 1A

Voltage - Collector Emitter Breakdown (Max) :

45V