BFG135,115

производитель :

NXP USA Inc.

категория продукта :

Транзисторы - биполярные (BJT) - RF

Current - Collector (Ic) (Max) :

150mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 100mA, 10V

Frequency - Transition :

7GHz

Gain :

-

Mounting Type :

Surface Mount

Noise Figure (dB Typ @ f) :

-

Operating Temperature :

175°C (TJ)

Package / Case :

TO-261-4, TO-261AA

Packaging :

Digi-Reel®

Part Status :

Obsolete

Power - Max :

1W

Series :

-

Supplier Device Package :

SOT-223

Transistor Type :

NPN

Voltage - Collector Emitter Breakdown (Max) :

15V