BFG425W,115

производитель :

NXP USA Inc.

категория продукта :

Транзисторы - биполярные (BJT) - RF

Current - Collector (Ic) (Max) :

30mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

50 @ 25mA, 2V

Frequency - Transition :

25GHz

Gain :

20dB

Mounting Type :

Surface Mount

Noise Figure (dB Typ @ f) :

0.8dB ~ 1.2dB @ 900MHz ~ 2GHz

Operating Temperature :

150°C (TJ)

Package / Case :

SC-82A, SOT-343

Packaging :

Digi-Reel®

Part Status :

Obsolete

Power - Max :

135mW

Series :

-

Supplier Device Package :

CMPAK-4

Transistor Type :

NPN

Voltage - Collector Emitter Breakdown (Max) :

4.5V