BFT25A,215

производитель :

NXP USA Inc.

категория продукта :

Транзисторы - биполярные (BJT) - RF

Current - Collector (Ic) (Max) :

6.5mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

50 @ 500µA, 1V

Frequency - Transition :

5GHz

Gain :

-

Mounting Type :

Surface Mount

Noise Figure (dB Typ @ f) :

1.8dB ~ 2dB @ 1GHz

Operating Temperature :

175°C (TJ)

Package / Case :

TO-236-3, SC-59, SOT-23-3

Packaging :

Cut Tape (CT)

Part Status :

Active

Power - Max :

32mW

Series :

-

Supplier Device Package :

TO-236AB (SOT23)

Transistor Type :

NPN

Voltage - Collector Emitter Breakdown (Max) :

5V