BFU530AVL

производитель :

NXP USA Inc.

категория продукта :

Транзисторы - биполярные (BJT) - RF

Current - Collector (Ic) (Max) :

40mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 10mA, 8V

Frequency - Transition :

11GHz

Gain :

12dB

Mounting Type :

Surface Mount

Noise Figure (dB Typ @ f) :

1.1dB @ 1.8GHz

Operating Temperature :

-40°C ~ 150°C (TJ)

Package / Case :

TO-236-3, SC-59, SOT-23-3

Packaging :

Tape & Reel (TR)

Part Status :

Active

Power - Max :

450mW

Series :

-

Supplier Device Package :

TO-236AB (SOT23)

Transistor Type :

NPN

Voltage - Collector Emitter Breakdown (Max) :

12V