BFU710F,115

производитель :

NXP USA Inc.

категория продукта :

Транзисторы - биполярные (BJT) - RF

Current - Collector (Ic) (Max) :

10mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 1mA, 2V

Frequency - Transition :

43GHz

Gain :

-

Mounting Type :

Surface Mount

Noise Figure (dB Typ @ f) :

0.85dB ~ 1.45dB @ 5.8GHz ~ 12GHz

Operating Temperature :

150°C (TJ)

Package / Case :

SOT-343F

Packaging :

Digi-Reel®

Part Status :

Active

Power - Max :

136mW

Series :

-

Supplier Device Package :

4-DFP

Transistor Type :

NPN

Voltage - Collector Emitter Breakdown (Max) :

2.8V