BUK7E1R6-30E,127

производитель :

NXP USA Inc.

категория продукта :

Транзисторы - полевые транзисторы, МОП-транзисторы - одиночные

Current - Continuous Drain (Id) @ 25°C :

120A (Tc)

Drain to Source Voltage (Vdss) :

30V

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

154nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

11960pF @ 25V

Mounting Type :

Through Hole

Operating Temperature :

-55°C ~ 175°C (TJ)

Package / Case :

TO-262-3 Long Leads, I²Pak, TO-262AA

Packaging :

Tube

Part Status :

Obsolete

Power Dissipation (Max) :

349W (Tc)

Rds On (Max) @ Id, Vgs :

1.6 mOhm @ 25A, 10V

Series :

TrenchMOS™

Supplier Device Package :

I2PAK

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

4V @ 1mA