J111,126

производитель :

NXP USA Inc.

категория продукта :

Транзисторы - JFET

Current - Drain (Idss) @ Vds (Vgs=0) :

20mA @ 15V

Current Drain (Id) - Max :

-

Drain to Source Voltage (Vdss) :

40V

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

6pF @ 10V (VGS)

Mounting Type :

Through Hole

Operating Temperature :

150°C (TJ)

Package / Case :

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Packaging :

Tape & Box (TB)

Part Status :

Obsolete

Power - Max :

400mW

Resistance - RDS(On) :

30 Ohms

Series :

-

Supplier Device Package :

TO-92-3

Voltage - Breakdown (V(BR)GSS) :

40V

Voltage - Cutoff (VGS off) @ Id :

10V @ 1µA