PBRN113ES,126

производитель :

NXP USA Inc.

категория продукта :

Транзисторы - биполярные (BJT) - одиночные, предварительно предвзятые

Current - Collector (Ic) (Max) :

800mA

Current - Collector Cutoff (Max) :

500nA

DC Current Gain (hFE) (Min) @ Ic, Vce :

180 @ 300mA, 5V

Frequency - Transition :

-

Mounting Type :

Through Hole

Package / Case :

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Packaging :

Tape & Box (TB)

Part Status :

Obsolete

Power - Max :

700mW

Resistor - Base (R1) :

1 kOhms

Resistor - Emitter Base (R2) :

1 kOhms

Series :

-

Supplier Device Package :

TO-92-3

Transistor Type :

NPN - Pre-Biased

Vce Saturation (Max) @ Ib, Ic :

1.15V @ 8mA, 800mA

Voltage - Collector Emitter Breakdown (Max) :

40V