PH5525L,115

производитель :

NXP USA Inc.

категория продукта :

Транзисторы - полевые транзисторы, МОП-транзисторы - одиночные

Current - Continuous Drain (Id) @ 25°C :

81.7A (Tc)

Drain to Source Voltage (Vdss) :

25V

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

16.6nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

2150pF @ 12V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

SC-100, SOT-669

Packaging :

Tape & Reel (TR)

Part Status :

Obsolete

Power Dissipation (Max) :

62.5W (Tc)

Rds On (Max) @ Id, Vgs :

5.5 mOhm @ 25A, 10V

Series :

TrenchMOS™

Supplier Device Package :

LFPAK56, Power-SO8

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

2.15V @ 1mA