PMV65UN,215

производитель :

NXP USA Inc.

категория продукта :

Транзисторы - полевые транзисторы, МОП-транзисторы - одиночные

Current - Continuous Drain (Id) @ 25°C :

2.2A (Ta)

Drain to Source Voltage (Vdss) :

20V

Drive Voltage (Max Rds On, Min Rds On) :

1.8V, 4.5V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

3.9nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

183pF @ 10V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

TO-236-3, SC-59, SOT-23-3

Packaging :

Tape & Reel (TR)

Part Status :

Obsolete

Power Dissipation (Max) :

310mW (Ta), 2.17W (Tc)

Rds On (Max) @ Id, Vgs :

76 mOhm @ 2A, 4.5V

Series :

-

Supplier Device Package :

TO-236AB (SOT23)

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±8V

Vgs(th) (Max) @ Id :

1V @ 250µA