PUML1,115

производитель :

NXP USA Inc.

категория продукта :

Транзисторы - биполярные (BJT) - массивы, предварительно предвзятые

Current - Collector (Ic) (Max) :

100mA, 200mA

Current - Collector Cutoff (Max) :

1µA

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 5mA, 5V / 210 @ 2mA, 10V

Frequency - Transition :

230MHz

Mounting Type :

Surface Mount

Package / Case :

6-TSSOP, SC-88, SOT-363

Packaging :

Tape & Reel (TR)

Part Status :

Obsolete

Power - Max :

300mW

Resistor - Base (R1) :

10 kOhms

Resistor - Emitter Base (R2) :

10 kOhms

Series :

-

Supplier Device Package :

6-TSSOP

Transistor Type :

1 NPN Pre-Biased, 1 NPN

Vce Saturation (Max) @ Ib, Ic :

150mV @ 500µA, 10mA / 250mV @ 10mA, 100mA

Voltage - Collector Emitter Breakdown (Max) :

50V