2N3906RL1G

производитель :

ON Semiconductor

категория продукта :

Транзисторы - биполярные (BJT) - одиночные

Current - Collector (Ic) (Max) :

200mA

Current - Collector Cutoff (Max) :

-

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 10mA, 1V

Frequency - Transition :

250MHz

Mounting Type :

Through Hole

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Packaging :

Tape & Reel (TR)

Part Status :

Obsolete

Power - Max :

625mW

Series :

-

Supplier Device Package :

TO-92-3

Transistor Type :

PNP

Vce Saturation (Max) @ Ib, Ic :

400mV @ 5mA, 50mA

Voltage - Collector Emitter Breakdown (Max) :

40V