2N5770_D26Z

производитель :

ON Semiconductor

категория продукта :

Транзисторы - биполярные (BJT) - RF

Current - Collector (Ic) (Max) :

50mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

50 @ 8mA, 10V

Frequency - Transition :

-

Gain :

15dB

Mounting Type :

Through Hole

Noise Figure (dB Typ @ f) :

6dB @ 60MHz

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

Packaging :

Tape & Reel (TR)

Part Status :

Obsolete

Power - Max :

350mW

Series :

-

Supplier Device Package :

TO-92-3

Transistor Type :

NPN

Voltage - Collector Emitter Breakdown (Max) :

15V