BSP19AT1G

производитель :

ON Semiconductor

категория продукта :

Транзисторы - биполярные (BJT) - одиночные

Current - Collector (Ic) (Max) :

100mA

Current - Collector Cutoff (Max) :

20nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

40 @ 20mA, 10V

Frequency - Transition :

70MHz

Mounting Type :

Surface Mount

Operating Temperature :

-65°C ~ 150°C (TJ)

Package / Case :

TO-261-4, TO-261AA

Packaging :

Tape & Reel (TR)

Part Status :

Obsolete

Power - Max :

800mW

Series :

-

Supplier Device Package :

SOT-223

Transistor Type :

NPN

Vce Saturation (Max) @ Ib, Ic :

500mV @ 4mA, 50mA

Voltage - Collector Emitter Breakdown (Max) :

350V