ECH8309-TL-H

производитель :

ON Semiconductor

категория продукта :

Транзисторы - полевые транзисторы, МОП-транзисторы - одиночные

Current - Continuous Drain (Id) @ 25°C :

9.5A (Ta)

Drain to Source Voltage (Vdss) :

12V

Drive Voltage (Max Rds On, Min Rds On) :

1.8V, 4.5V

FET Feature :

-

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

18nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

1780pF @ 6V

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Package / Case :

8-SMD, Flat Lead

Packaging :

Tape & Reel (TR)

Part Status :

Active

Power Dissipation (Max) :

1.5W (Ta)

Rds On (Max) @ Id, Vgs :

16 mOhm @ 4.5A, 4.5V

Series :

-

Supplier Device Package :

8-ECH

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±10V

Vgs(th) (Max) @ Id :

-