EMT1DXV6T1G

производитель :

ON Semiconductor

категория продукта :

Транзисторы - биполярные (BJT) - массивы

Current - Collector (Ic) (Max) :

100mA

Current - Collector Cutoff (Max) :

500nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 1mA, 6V

Frequency - Transition :

140MHz

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

SOT-563, SOT-666

Packaging :

Tape & Reel (TR)

Part Status :

Active

Power - Max :

500mW

Series :

-

Supplier Device Package :

SOT-563

Transistor Type :

2 PNP (Dual)

Vce Saturation (Max) @ Ib, Ic :

500mV @ 5mA, 50mA

Voltage - Collector Emitter Breakdown (Max) :

60V