FDC3601N

производитель :

ON Semiconductor

категория продукта :

Транзисторы - полевые транзисторы, МОП-транзисторы - массивы

Current - Continuous Drain (Id) @ 25°C :

1A

Drain to Source Voltage (Vdss) :

100V

FET Feature :

Standard

FET Type :

2 N-Channel (Dual)

Gate Charge (Qg) (Max) @ Vgs :

5nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

153pF @ 50V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Packaging :

Cut Tape (CT)

Part Status :

Active

Power - Max :

700mW

Rds On (Max) @ Id, Vgs :

500 mOhm @ 1A, 10V

Series :

PowerTrench®

Supplier Device Package :

SuperSOT™-6

Vgs(th) (Max) @ Id :

4V @ 250µA