FDC5612

производитель :

ON Semiconductor

категория продукта :

Транзисторы - полевые транзисторы, МОП-транзисторы - одиночные

Current - Continuous Drain (Id) @ 25°C :

4.3A (Ta)

Drain to Source Voltage (Vdss) :

60V

Drive Voltage (Max Rds On, Min Rds On) :

6V, 10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

18nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

650pF @ 25V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Packaging :

Cut Tape (CT)

Part Status :

Active

Power Dissipation (Max) :

1.6W (Ta)

Rds On (Max) @ Id, Vgs :

55 mOhm @ 4.3A, 10V

Series :

PowerTrench®

Supplier Device Package :

SuperSOT™-6

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

4V @ 250µA